Asynchronous SRAMs provide 4 Mb capacity. (ThomasNet)

Fabricated using 6T cell, 0.13 micron, CMOS technology, 4 Mb asynchronous SRAMs are organized as 512Kx8 (IS61C5128AX/IS64C5128AX) and 256Kx16 (IS61C25616X/IS64C25616X) devices with access times up to 10 nS and standby current down to 200 nA. Products operate from single 5 V, 10% power supply and have TTL compatible interface levels. Commercial, industrial, and automotive temperature ranges are ...

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